MRF6VP41KHR6 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
65
60
T_C = −30_C
25_C
85_C
55
50
V_DD = 50 Vdc
45
I_DQ = 150 mA
f = 450 MHz
40
Pulse Width = 100 μsec
Duty Cycle = 20%
35
20
25
30
35
40
45
P_in, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus
Input Power
22
100
21
V_DD = 50 Vdc
I_DQ = 150 mA
20 f = 450 MHz
T_C = −30_C
90
80
19 ^{Pulse Width = 100 μsec}
Duty Cycle = 20%
18
17
G_ps
85_C
70
60
25_C
50
16
40
15
η_D
30
14
20
13
10
12
0
1
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
10⁷
10⁶
10⁵
10⁴
90
110 130 150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and η_D = 64%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF6VP41KHR6 MRF6VP41KHSR6
6
RF Device Data
Freescale Semiconductor