MRF6S23140H_V2 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
17
G_ps
16
T_C = −30_C
25_C
15
85_C
14
V_DD = 28 Vdc
13 I_DQ = 1300 mA
f = 2350 MHz
η_D
12
60
16
−30_C
25_C ₅₀
15
85_C
40
14
30
13
20
10
12
I_DQ = 1300 mA
f = 2350 MHz
V_DD = 24 V ^{28 V} 32 V
11
0.5 1
0
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus Output Power
11
0
50
100
150
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 28 W Avg., and η_D = 25%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
7