MRF6S23140H_V2 Datasheet, PDF (11/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
2
Date
Dec. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 11
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
11