MRF6S19140HR3_07 Datasheet, PDF (7/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 29 W Avg., and η_D = 27.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
100
0
1.2288 MHz
− 10
Channel BW
10
− 20
−IM3 in
+IM3 in
1
− 30
1.2288 MHz
1.2288 MHz
Integrated BW
Integrated BW
0.1
− 40
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
− 50
0.01 _{Carriers. ACPR Measured in 30 kHz Bandwidth @}
− 60
±885 kHz Offset. IM3 Measured in 1.2288 MHz
0.001
0.0001
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
− 70
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
− 80
0
2
4
6
8
10
− 90
PEAK −TO−AVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
− 100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5
6 7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
7