MRF6S19140HR3_07 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
20
40
18 ^ηD
30
16
20
G_ps
14
V_DD = 28 Vdc, P_out = 29 W (Avg.), I_DQ = 1150 mA
10
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
12
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
0
10
IRL ^{@ 0.01% Probability (CCDF)}
− 10
− 10
− 12
8 _IM3
− 20
− 14
− 16
6
4 ACPR
− 40
− 18
− 20
− 60
− 22
2
− 80
− 24
− 26
0
− 100
− 28
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
− 30
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P_out = 29 Watts Avg.
18 _ηD
50
16
40
14 ^{Gps VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1150 mA}
30
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
12
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
20
@ 0.01% Probability (CCDF)
10
IRL
8
− 10
0
− 12
− 14
− 20
− 16
IM3
6
ACPR
− 18
− 40
− 20
− 22
4
− 60
− 24
− 26
2
− 80
− 28
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
− 30
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P_out = 75 Watts Avg.
18
I_DQ = 1700 mA
17
1500 mA
16 1150 mA
15 ^{900 mA}
14 ^{600 mA}
13
V_DD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
12
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
−20 ^{Two −Tone Measurements, 2.5 MHz Tone Spacing}
− 30
600 mA
− 40
900 mA
I_DQ = 1700 mA
− 50
1150 mA
1500 mA
− 60
1
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
5