MRF5S19090HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 1990 MHz
Z_load
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Z_source
Z_o = 10 Ω
V_DD = 28 V, I_DQ = 850 mA, P_out = 18 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
1990
2.98 - j5.12
3.36 - j4.65
4.06 - j4.64
2.07 - j1.31
2.02 - j1.18
1.93 - j1.01
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
7