MRF5S19090HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16
40
G_ps
14 ^ηD
30
V_DD = 28 Vdc, P_out = 18 W (Avg.), I_DQ = 850 mA
12
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
IRL PAR = 9.8 dB @ 0.01% Probability (CCDF)
10
20
0
−20
−10
IM3
8
ACPR
−20
−40
−30
−40
6
−60
−50
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
17
I_DQ = 1300 mA
16 _{1100 mA}
850 mA
15
650 mA
14
450 mA
13
12
1
V_DD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−25
V_DD = 28 Vdc, P_out = 90 W (PEP), I_DQ = 850 mA
−30
3rd Order
−35
−40
5th Order
−45
7th Order
−50
−55
0.1
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
1
10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
−15
V_DD = 28 Vdc
−20 _{f1 = 1958.75 MHz, f2 = 1961.25 MHz}
Two−Tone Measurement, 2.5 MHz Tone Spacing
−25
−30
−35
−40
I_DQ = 450 mA
−45
−50
1100 mA
650 mA
1300 mA
850 mA
−55
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
56
55
Ideal
54
P3dB = 51.21 dBm (132.13 W)
53
52
P1dB = 50.82 dBm (120.78 W)
51
50
Actual
49
48
47
46
45
31 32 33
V_DD = 28 Vdc, I_DQ = 850 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
34 35 36 37 38 39 40 41 42
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19090HR3 MRF5S19090HSR3
5