MRF5P21240HR6 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

f = 2190 MHz
f = 2190 MHz
Z_source
f = 2090 MHz
Z_load*
f = 2090 MHz
Z_o = 25 Ω
V_DD = 28 Vdc, I_DQ = 2200 mA, P_out = 52 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2090
2110
2130
5.33 - j6.21
5.44 - j5.88
5.40 - j6.16
11.42 - j2.25
10.45 - j2.16
11.28 - j2.14
2150
2170
2190
5.12 - j6.06
4.96 - j5.25
4.98 - j4.47
11.38 - j2.14
11.04 - j1.25
10.73 - j0.40
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 12. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF5P21240HR6
7