MRF5P21240HR6 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
M3 (Minimum)
Charge Device Model (per JESD22 - C101)
C6 (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 300 μAdc)
Gate Quiescent Voltage ⁽³⁾
(V_DS = 28 Vdc, I_D = 2200 mAdc)
Drain- Source On - Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 3 Adc)
Forward Transconductance ⁽¹⁾
(V_DS = 10 Vdc, I_D = 3 Adc)
V_GS(th)
2
2.8
4
Vdc
V_GS(Q)
3
3.8
5
Vdc
V_DS(on)
—
0.26
0.3
Vdc
g_fs
—
7.5
—
S
Dynamic Characteristics ^(1,2)
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
2.75
—
pF
Functional Tests ⁽³⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 2200 mA, P_out = 52 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G_ps
12
13
—
dB
Drain Efficiency
η_D
22.5
24
—
%
Intermodulation Distortion
IM3
—
- 36
- 34
dBc
Adjacent Channel Power Ratio
ACPR
—
- 39
- 37
dBc
Input Return Loss
IRL
—
- 12
-9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF5P21240HR6
2
RF Device Data
Freescale Semiconductor