MRF282SR1 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 5 Ω
f = 2000 MHz
Z_in
f = 1800 MHz
f = 2000 MHz ^ZOL*
f = 1800 MHz
V_DD = 26 V, I_DQ = 75 mA, P_out = 10 W (PEP)
f
Z_in
MHz
Ω
Z_OL*
Ω
1800
1860
1900
1960
2000
2.1 + j1.0
2.05 + j1.15
2.0 + j1.2
1.9 + j1.4
1.85 + j1.6
3.8 - j0.15
3.77 - j0.13
3.75 - j0.1
3.65 + j0.1
3.55 + j0.2
Z_in = Complex conjugate of source impedance.
Z_OL* = Complex conjugate of the optimum load
impedance at given output power, voltage, IMD,
bias current and frequency.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 5. Series Equivalent Input and Output Impedence
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
7