MRF282SR1 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 50 μAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 0.5 Adc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 75 mAdc)
Dynamic Characteristics
Input Capacitance
(V_DS = 26 Vdc, V_GS = 0, f = 1.0 MHz)
Output Capacitance
(V_DS = 26 Vdc, V_GS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V_DS = 26 Vdc, V_GS = 0, f = 1.0 MHz)
Functional Tests (In Freescale Test Fixture)
Common - Source Power Gain
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
V_GS(th)
2.0
3.0
4.0
Vdc
V_DS(on)
—
0.4
0.6
Vdc
V_GS(q)
3.0
4.0
5.0
Vdc
C_iss
—
15
—
pF
C_oss
—
8.0
—
pF
C_rss
—
0.45
—
pF
G_ps
10.5
11.5
—
dB
Drain Efficiency
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
28
—
—
%
Intermodulation Distortion
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
- 14
-9
dB
Common - Source Power Gain
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
G_ps
10.5
11.5
—
dB
Drain Efficiency
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
28
—
—
%
Intermodulation Distortion
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(V_DD = 26 Vdc, P_out = 10 W PEP, I_DQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
- 14
-9
dB
Common - Source Power Gain
(V_DD = 26 Vdc, P_out = 10 W CW, I_DQ = 75 mA, f = 2000.0 MHz)
Drain Efficiency
(V_DD = 26 Vdc, P_out = 10 W CW, I_DQ = 75 mA, f = 2000.0 MHz)
G_ps
9.5
11.5
—
dB
η
35
40
—
%
MRF282SR1 MRF282ZR1
2
RF Device Data
Freescale Semiconductor