MRF21125R3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2110 MHz
Z_load
2170 MHz
Z_o = 10 Ω
f = 2110 MHz
Z_source
2170 MHz
V_DD = 28 V, I_DQ = 1600 mA, P_out = 20 W (Avg.), 2−Carrier W−CDMA
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
2170
3.81 - j6.86
4.33 - j7.90
4.84 - j8.46
1.56 - j1.58
1.53 - j1.90
1.48 - j2.26
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 9. Series Equivalent Source and Load Impedance
MRF21125R3 MRF21125SR3
7