MRF21125R3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 μAdc)
V_(BR)DSS
65
—
—
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
On Characteristics
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
g_fs
—
10.8
—
Gate Threshold Voltage
(V_DS = 10 V, I_D = 300 μA)
V_GS(th)
2
—
4
Gate Quiescent Voltage
(V_DS = 28 V, I_D = 1300 mA)
V_GS(Q)
2.5
3.9
4.5
Drain- Source On - Voltage
(V_GS = 10 V, I_D = 1 A)
V_DS(on)
—
0.12
—
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
5.4
—
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured
in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Common- Source Amplifier Power Gain
G_ps
12
13
—
(V_DD = 28 Vdc, P_out = 20 W Avg, 2-carrier W-CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 20 W Avg, 2-carrier W-CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
17
18
—
Vdc
μAdc
μAdc
S
Vdc
Vdc
Vdc
pF
dB
%
Third Order Intermodulation Distortion
IM3
—
- 43
- 40
dBc
(V_DD = 28 Vdc, P_out = 20 W Avg, 2-carrier W-CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to
carrier channel power.)
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 20 W Avg, 2-carrier W-CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to
carrier channel power.)
- 45
- 40
dBc
Input Return Loss
IRL
—
- 12
- 9.0
dB
(V_DD = 28 Vdc, P_out = 20 W Avg, 2-carrier W-CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
1. Part internally matched both on input and output.
(continued)
MRF21125R3 MRF21125SR3
2
RF Device Data
Freescale Semiconductor