MRF1550FNT1 Datasheet, PDF (7/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 5. Common Source Scattering Parameters (V_DD = 12.5 Vdc)
I_DQ = 500 mA
f
MHz
50
S₁₁
|S₁₁|
∠φ
0.93
- 178
S₂₁
|S₂₁|
∠φ
4.817
80
100
0.94
- 178
2.212
69
150
0.95
- 178
1.349
61
200
0.95
- 178
0.892
54
250
0.96
- 178
0.648
51
300
0.97
- 178
0.481
47
350
0.97
- 178
0.370
46
400
0.98
- 178
0.304
43
450
0.98
- 178
0.245
43
500
0.98
- 178
0.209
43
550
0.99
- 177
0.178
41
600
0.98
- 178
0.149
41
f
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S₁₁
|S₁₁|
∠φ
0.93
- 177
0.94
- 178
0.95
- 178
0.95
- 178
0.96
- 178
0.97
- 178
0.97
- 178
0.98
- 178
0.98
- 178
0.98
- 177
0.99
- 177
0.98
- 178
|S₂₁|
4.81
2.20
1.35
0.89
0.65
0.48
0.37
0.30
0.25
0.21
0.18
0.15
I_DQ = 2.0 mA
S₂₁
∠φ
80
69
61
54
51
47
46
43
43
44
41
41
f
MHz
50
100
150
200
250
300
350
S₁₁
|S₁₁|
∠φ
0.97
- 179
0.96
- 179
0.96
- 179
0.96
- 179
0.97
- 179
0.97
- 179
0.97
- 179
|S₂₁|
5.04
2.43
1.60
1.14
0.89
0.71
0.57
I_DQ = 4.0 mA
S₂₁
∠φ
87
82
77
74
71
68
67
S₁₂
|S₁₂|
∠φ
0.009
- 39
0.009
-3
0.008
-8
0.006
- 13
0.005
-7
0.004
-8
0.005
4
0.001
15
0.005
81
0.003
84
0.007
70
0.010
106
S₁₂
|S₁₂|
0.003
0.006
0.003
0.004
0.001
0.004
0.006
0.007
0.006
0.006
0.002
0.004
∠φ
- 119
4
-1
18
28
77
85
53
74
84
106
116
S₁₂
|S₁₂|
0.002
0.006
0.004
0.003
0.004
0.006
0.006
∠φ
- 116
42
13
43
65
68
74
S₂₂
|S₂₂|
∠φ
0.86
- 176
0.88
- 175
0.90
- 174
0.92
- 174
0.93
- 174
0.95
- 174
0.95
- 174
0.97
- 174
0.97
- 174
0.97
- 174
0.98
- 175
0.96
- 175
S₂₂
|S₂₂|
∠φ
0.93
- 178
0.93
- 178
0.93
- 177
0.93
- 176
0.94
- 176
0.94
- 175
0.95
- 175
0.96
- 174
0.97
- 174
0.97
- 174
0.97
- 175
0.96
- 174
|S₂₂|
0.94
0.94
0.94
0.95
0.95
0.95
0.97
S₂₂
∠φ
- 179
- 178
- 177
- 176
- 175
- 175
- 174
(continued)
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
7