MRF1550FNT1 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 14.5 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF1550N
Rev. 14, 10/2008
MRF1550NT1
MRF1550FNT1
175 MHz, 50 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264 - 10, STYLE 1
TO - 272 - 6 WRAP
PLASTIC
MRF1550NT1
CASE 1264A - 03, STYLE 1
TO - 272 - 6
PLASTIC
MRF1550FNT1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C ⁽¹⁾
Derate above 25°C
V_DSS
V_GS
I_D
P_D
- 0.5, +40
± 20
12
165
0.50
Vdc
Vdc
Adc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
T_stg
- 65 to +150
°C
T_J
200
°C
Characteristic
Symbol
Value⁽²⁾
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
R_θJC
0.75
°C/W
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
260
°C
1.
Calculated based on the formula P_D =
TJ _– TC
R_θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
1