MC13211 Datasheet, PDF (62/70 Pages) Freescale Semiconductor, Inc – ZigBee™- Compliant Platform - 2.4 GHz Low Power Transceiver for the IEEE® 802.15.4 Standard plus Microcontroller

6.4.4 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory. Program and erase operations do not require any special power sources other than the normal
V_DD supply.
Table 21. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
V_prog/erase
2.1
3.6
V
Supply voltage for read operation
0 < f_Bus < 8 MHz
0 < f_Bus < 20 MHz
Internal FCLK frequency¹
V_Read
f_FCLK
1.8
2.08
150
V
3.6
3.6
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)⁽²⁾
Byte program time (burst mode)⁽²⁾
Page erase time²
Mass erase time⁽²⁾
Program/erase endurance³
T_L to T_H = –40°C to + 85°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
5
10,000
9
4
4000
20,000
100,000
6.67
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied}
for calculating approximate time to program and erase.
3 _{Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how}
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for
Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Non-volatile Memory.
MC13211/212/213 Technical Data, Rev. 1.5
62
Freescale Semiconductor