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MRFE6VP5600HR6 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
TYPICAL CHARACTERISTICS
109
108
107
106
105
104
90
110 130 150 170
190 210
230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 600 W Avg., and ηD = 75.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature — CW
MRFE6VP5600HR6 MRFE6VP5600HSR6
6
RF Device Data
Freescale Semiconductor