MRFE6VP5600HR6 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

Freescale Semiconductor
Technical Data
Document Number: MRFE6VP5600H
Rev. 0, 12/2010
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: V_DD = 50 Volts, I_DQ = 100 mA
Signal Type
P_out
(W)
f
G_ps
η_D
IRL
(MHz)
(dB)
(%)
(dB)
Pulsed (100 μsec, 600 Peak
230
20% Duty Cycle)
25.0
74.6
--18
CW
600 Avg.
230
24.6
75.2
--17
MRFE6VP5600HR6
MRFE6VP5600HSR6
1.8--600 MHz, 600 W CW, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
• 600 Watts CW Output Power
• 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 V_DD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP5600HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP5600HSR6
PARTS ARE PUSH--PULL
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating Junction Temperature ^(1,2)
Symbol
V_DSS
V_GS
T_stg
T_C
P_D
T_J
Value
--0.5, +130
--6.0, +10
-- 65 to +150
150
1667
8.33
225
Unit
Vdc
Vdc
°C
°C
W
W/°C
°C
RF_in/V_GS 3
1 RF_out/V_DS
RF_out/V_GS 4
2 RF_out/V_DS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol Value ^(2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
Z_θJC
R_θJC
0.022
0.12
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6
1