MRFE6S9201HR3 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
22
40
21
G_ps
35
20
η_D
30
19
25
18
V_DD = 28 Vdc, P_out = 40 W (Avg.)
I_DQ = 1400 mA, N−CDMA IS−95 Pilot
20
17
Sync, Paging, Traffic Codes 8 Through 13
−40
0
16
−45
−5
15
ACPR
−50
−10
14
IRL
−55
−15
13
ALT1
−60
−20
12
−65
−25
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P_out = 40 Watts Avg.
22
50
21
η_D
40
20
30
19
18
G_ps
V_DD = 28 Vdc, P_out = 84 W (Avg.)
I_DQ = 1400 mA, N−CDMA IS−95 Pilot
20
−30
Sync, Paging, Traffic Codes 8 Through 13
17 ^ACPR
−35
0
16
IRL
15
−40
−5
−45
−10
14
−50
−15
13
ALT1
−55
−20
12
−60
−25
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P_out = 84 Watts Avg.
23
I_DQ = 2100 mA
22
1750 mA
21
1400 mA
20
1050 mA
19
700 mA
18
1
V_DD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
I_DQ = 700 mA
−40
1050 mA
−50
1400 mA
1750 mA
−60
2100 mA
−70
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9201HR3 MRFE6S9201HSR3
6
RF Device Data
Freescale Semiconductor