MRFE6S9201HR3 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance: V_DD = 28 Volts, I_DQ =
1400 mA, P_out = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.8 dB
Drain Efficiency — 31.3%
Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF
ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P_out = 270 W CW
(2 dB Input Overdrive from Rated P_out), Designed for Enhanced Ruggedness
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9201H
Rev. 1, 12/2008
MRFE6S9201HR3
MRFE6S9201HSR3
880 MHz, 40 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9201HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9201HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
- 0.5, +66
Vdc
V_GS
- 6.0, +10
Vdc
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 197 W CW
Case Temperature 75°C, 40 W CW
R_θJC
0.34
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9201HR3 MRFE6S9201HSR3
1