MRF7S21210HSR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
20
31
19
η_D
30
18
G_ps
29
17
16
15 _ACPR
14
V_DD = 28 Vdc, P_out = 63 W (Avg.)
28
I_DQ = 1400 mA, Single−Carrier W−CDMA
27
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF ^−29
0
−1
−31
−4
−1.2
13 IRL
−33
−8
−1.4
12
−35
−12
−1.6
11 _PARC
−37
−16
−1.8
10
−39
−20
−2
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Note: Measurement conducted with device soldered on Freescale test fixture.
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 63 Watts Avg.
19
I_DQ = 2100 mA
18 _{1750 mA}
17 ^{1400 mA}
16 _{1050 mA}
15
700 mA
14
1
V_DD = 28 Vdc, f = 2140 MHz
CW Measurements
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 4. CW Power Gain versus Output Power
−10
V_DD = 28 Vdc, P_out = 130 W (PEP), I_DQ = 1400 mA
Two−Tone Measurements
−20 _{(f1 + f2)/2 = Center Frequency of 2140 MHz}
−30
IM3−L IM3−U
IM5−U
−40
IM5−L
−50
IM7−L
−60
IM7−U
−70
1
10
100
TWO−TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
19
18.5
18
17.5
17
16.5
16
MRF7S21210HSR3
6
1
−1 dB = 48.327 W
0
−1
45
−25
ACPR
40
−30
η_D
35
−35
−2
−2 dB = 67.216 W
−3
30
−40
−3 dB = 89.144 W
G_ps
25
−45
PARC
−4 V_DD = 28 Vdc, I_DQ = 1400 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
20
−50
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
−5
15
−55
30
50
70
90
110
130
P_out, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
RF Device Data
Freescale Semiconductor