MRF7S21210HSR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD - SCDMA, PCN - PCS/cellular radio and
WLL applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ =
1400 mA, P_out = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 18.5 dB
Drain Efficiency — 29%
Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 33 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW
Output Power
• Typical P_out @ 1 dB Compression Point ] 190 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S21210H
Rev. 0, 7/2008
MRF7S21210HSR3
2110 - 2170 MHz, 63 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ⁽¹⁾
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
253
1.5
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ⁽²⁾
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 72°C, 63 W CW
R_θJC
0.33
0.37
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21210HSR3
1