MRF7S19170HR3_08 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18
35
17 _Gps
34
16
33
η_D
15
32
14
IRL
13
V_DD = 28 Vdc, P_out = 50 W (Avg.), I_DQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
31
Bandwidth, PAR = 7.5 dB @ 0.01%
−1
Probability (CCDF)
−10
−15
12
−1.5
−20
PARC
11
−2
−25
10
−2.5
−30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 50 Watts Avg.
18
44
17
43
η_D
16
42
15 ^Gps _{VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA}
41
14
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
40
−10
IRL
13
−3
−15
12 _PARC
11
−3.4
−20
−3.8
−25
10
−4.2
−30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 84 Watts Avg.
19
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
18 I_DQ = 2100 mA
1750 mA
17
1400 mA
16
1050 mA
700 mA
15
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
I_DQ = 700 mA
−40
2100 mA
1050 mA
−50
1750 mA
1400 mA
−60
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19170HR3 MRF7S19170HSR3
6
RF Device Data
Freescale Semiconductor