MRF7S19170HR3_08 Datasheet, PDF (10/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61
60
P6dB = 54.33 dBm (271 W)
Ideal
59
58
57 ^{P3dB = 53.97 dBm (249 W)}
56
55 ^{P1dB = 53.25 dBm}
(211 W)
54
Actual
53
52
V_DD = 28 Vdc, I_DQ = 1400 m, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 1960 MHz
51
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
2.34 - j9.24
0.79 - j2.94
Figure 17. Pulsed CW Output Power
versus Input Power
62
61
P6dB = 55.27 dBm (336 W)
60
59
P3dB = 54.9 dBm (310 W)
58
57
56 ^{P1dB = 54.14 dBm}
(259 W)
55
Ideal
Actual
54
53
V_DD = 32 Vdc, I_DQ = 1400 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 1960 MHz
52
33 34 35 36 37 38 39 40 41 42 43 44 45
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
2.34 - j9.24
0.79 - j2.94
Figure 18. Pulsed CW Output Power
versus Input Power
MRF7S19170HR3 MRF7S19170HSR3
10
RF Device Data
Freescale Semiconductor