MRF6S21140HR3_07 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
− 10
V_DD = 28 Vdc, P_out = 140 W (PEP), I_DQ = 1200 mA
Two −Tone Measurements
−20 ^{(f1 + f2)/2 = Center Frequency of 2140 MHz}
−30 ^{3rd Order}
−40 ^{5th Order}
−50 7th Order
− 60
0.1
1
10
100
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
57
Ideal
56
P3dB = 52.6 dBm (180 W)
55
54
53 ^{P1dB = 52 dBm (158.5 W)}
52
Actual
51
50
V_DD = 28 Vdc, I_DQ = 1200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
49
f = 2140 MHz
48
32
34
36
38
40
42
44
P_in, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
35
30
V_DD = 28 Vdc, I_DQ = 1200 mA
f1 = 2135 MHz, f2 = 2145 MHz
25_C
2−Carrier W−CDMA, 10 MHz Carrier 85_C
− 25
− 30_C
85_C _−30
25_C IM3
Spacing. 3.84 MHz Channel
25 _{Bandwidth. PAR = 8.5 dB}
@ 0.01% Probability (CCDF)
η_D
20
−30_C _−35
− 40
T_C = − 30_C G_ps
15
− 45
85_C
10
25_C
85_C
− 50
25_C _ACPR
5
− 30_C
− 55
0
− 60
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
18
V_DD = 28 Vdc
I_DQ = 1200 mA
17 _{f = 2140 MHz}
T_C = −30_C
− 30_C
60
25_C
85_C
50
16
25_C
15
85_C
14
η_D
40
G_ps
30
20
13
10
12
0
1
10
100
1000
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
16
15
14
32 V
13
28 V
12
V_DD = 24 V
11
10
I_DQ = 1200 mA
f = 2140 MHz
9
0
50
100
150
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S21140HR3 MRF6S21140HSR3
6
RF Device Data
Freescale Semiconductor