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MRF6S21140HR3_07 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
15.6
30
15.5
ηD 28
VDD = 28 Vdc, Pout = 30 W (Avg.),
15.4 IDQ = 1200 mA, 2âCarrier WâCDMA,
26
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, Gps
15.3 PAR = 8.5 dB @ 0.01% Probability (CCDF)
â 32
â 12
IRL
15.2
â 36
â 15
IM3
15.1
ACPR â40
â 18
15
â 44
â 21
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 30 Watts Avg.
15
42
14.9
40
ηD
14.8
VDD = 28 Vdc, Pout = 60 W (Avg.),
Gps 38
IDQ = 1200 mA, 2âCarrier WâCDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel
14.7
Bandwidth, PAR = 8.5 dB @ 0.01%
IRL â24
â 12
Probability (CCDF)
14.6
IM3 â27
â 15
14.5
â 30
â 18
ACPR
14.4
â 33
â 21
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 60 Watts Avg.
17
IDQ = 1800 mA
1500 mA
16
1200 mA
15 900 mA
14
600 mA
13
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two âTone Measurements, 10 MHz Tone Spacing
12
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â 20
VDD = 28 Vdc
â25 f1 = 2135 MHz, f2 = 2145 MHz
Two âTone Measurements, 10 MHz Tone Spacing
â 30
â 35
IDQ = 600 mA
1800 mA
â 40
â 45
1500 mA
â 50
900 mA
â 55
1200 mA
â 60
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
5
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