MRF6S19140HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
0
V_DD = 28 Vdc, P_out = 160 W (PEP), I_DQ = 1150 mA
−10 ^{Two−Tone Measurements, Center Frequency = 1960 MHz}
−20
−30 ^{3rd Order}
5th Order
−40
−50 ^{7th Order}
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
57
Ideal
P3dB = 53.1 dBm (204 W)
56
55
54
P1dB = 52.3 dBm (171 W)
53
52
Actual
51
50
49
48
V_DD = 28 Vdc, I_DQ = 1150 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
47
Center Frequency = 1960 MHz
46
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
50
V_DD = 28 Vdc, I_DQ = 1150 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
40 _{2−Carrier N−CDMA, 2.5 MHz Carrier}
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
30 _{@ 0.01% Probability (CCDF)}
T_C = 25°C
20
10
−20
IM3
−30
η_D
−40
ACPR
−50
G_ps
−60
0
−70
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
70
16 _Gps
60
15
50
14
40
13
30
12
20
11 _ηD
10
1
V_DD = 28 Vdc, I_DQ = 1150 mA ¹⁰
f = 1960 MHz, T_C = 25°C
0
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S19140HR3 MRF6S19140HSR3
6
18
17
16
V_DD = 32 V
15
14
28 V
13
24 V
12
20 V
11
10
16 V
9
12 V
8
I_DQ = 1150 mA
f = 1960 MHz
0
50
100
150
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor