MRF6S19100HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
0
V_DD = 28 Vdc, P_out = 100 W (PEP), I_DQ = 900 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
−10
−20
−30 _{3rd Order}
−40 5th Order
−50 7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
56
55
P3dB = 51.56 dBm (143.2 W)
Ideal
54
53
52
P1dB = 50.9 dBm (124.2 W)
51
Actual
50
49
48
V_DD = 28 Vdc, I_DQ = 900 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
47
f = 1960 MHz
46
30 31 32 33 34 35 36 37 38 39 40
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
60
V_DD = 28 Vdc, I_DQ = 900 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
50 _{2−Carrier N−CDMA, 2.5 MHz Carrier}
Spacing, 1.2288 MHz Channel
40 ^{Bandwidth, PAR = 9.8 dB}
@ 0.01% Probability (CCDF)
30
−10
η_D
IM3
−20
−30
ACPR
−40
20
−50
G_ps
10
−60
0
4
10
−70
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
70
G_ps
16
60
15
50
14
40
13
30
12
η_D
11
10
3
10
V_DD = 28 Vdc
I_DQ = 900 mA
f = 1960 MHz
100
20
10
0
200
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S19100HR3 MRF6S19100HSR3
6
18
16.5
15
V_DD = 32 V
13.5
28 V
12
24 V
10.5
20 V
9
16 V
7.5
12 V
I_DQ = 900 mA
f = 1960 MHz
6
0 25 50 75 100 125 150 175 200
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor