MRF6S19100HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16.6
η_D
29
16.4
27
G_ps
16.2
25
V_DD = 28 Vdc, P_out = 22 W (Avg.), I_DQ = 900 mA
16 _IM3 ^{2−Carrier N−CDMA, 2.5 MHz Carrier Spacing}
−35
−5
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
15.8
IRL ^{@ 0.01% Probability (CCDF)}
−41
−10
15.6
ACPR
−47
−15
15.4
−53
−20
1930 1940
1950 1960
1970
1980
1990
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P_out = 22 Watts Avg.
16.2
42
η_D
16
40
G_ps
15.8
38
15.6 _IM3
V_DD = 28 Vdc, P_out = 44 W (Avg.), I_DQ = 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
−25
−5
15.4
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
−30
15.2 IRL
@ 0.01% Probability (CCDF)
−10
−35
15 ACPR
−40
−15
14.8
−45
−20
1930 1940
1950
1960
1970
1980
1990
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P_out = 44 Watts Avg.
18
I_DQ = 1300 mA
17
1125 mA
16 _{900 mA}
15 ^{675 mA}
450 mA
14
V_DD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
13
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−15
V_DD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
−20 _{Two−Tone Measurements, 2.5 MHz Tone Spacing}
−25
−30
I_DQ = 450 mA
−35
675 mA
−40 _{1300 mA}
−45
−50
900 mA
1125 mA
−55
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
5