MRF6P9220HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – 880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1600 mA, f1 = 879.95 MHz
−20 f2 = 880.05 MHz, Two−Tone Measurements
Center Frequency = 880 MHz
−30
−40
−50 3rd Order
−60
5th Order
−70
7th Order
−80
−90
7 10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−20
V_DD = 28 Vdc, P_out = 220 W (PEP)
−25 I_DQ = 1600 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−30
−35
3rd Order
−40
5th Order
−45
−50
−55
7th Order
−60
0.1
1
10
50
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
MRF6P9220HR3
6
61
P6dB = 54.95 dBm (312.77 W)
Ideal
59
P3dB = 54.60 dBm (288.76 W)
57
P1dB = 54.05 dBm (255.09 W)
55
Actual
53
V_DD = 28 Vdc, I_DQ = 1600 mA
51
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 880 MHz
49
29
31
33
35
37
39
41
P_in, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
50
V_DD = 28 Vdc, I_DQ = 1600 mA
f = 880 MHz, N−CDMA IS−95
40 (Pilot, Sync, Paging, Traffic Codes
8 Through 13)
30
T_C = −30_C
G_ps
20
25_C
85_C
10
−30
25_C
η_D
−30_C
−35
25_C
85_C
−40
−45
ACPR
−50
0
−55
1
10
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single -Carrier N-CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor