MRF6P9220HR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – 880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N -Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single -Carrier N -CDMA Performance @ 880 MHz: V_DD = 28 Volts,
I_DQ = 1600 mA, P_out = 47 Watts Avg., IS -95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — -47.1 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW
Output Power
• Characterized with Series Equivalent Large -Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push -Pull Operation Only
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Pb -Free and RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6P9220H
Rev. 1, 11/2005
MRF6P9220HR3
880 MHz, 47 W AVG., 28 V
SINGLE N -CDMA
LATERAL N -CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI - 860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
-0.5, +68
-0.5, +12
700
4
Storage Temperature Range
Operating Junction Temperature
CW Operation
T_stg
- 65 to +150
T_J
200
CW
220
Table 2. Thermal Characteristics
Characteristic
Symbol
Value^(1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 220 W CW
Case Temperature 76°C, 47 W CW
R_θJC
0.25
0.28
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
1