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MRF6P21190HR6_06 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |||
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TYPICAL CHARACTERISTICS
â15
VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 1900 mA
â20 TwoâTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
â25
â30 3rd Order
â35
â40 5th Order
â45
â50 7th Order
â55
0.1
1
10
100
TWOâTONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
57
P3dB = 54.45 dBm (279 W)
Ideal
56
55 P1dB = 53.7 dBm (233 W)
54
53
Actual
52
51
50
49
VDD = 28 Vdc, IDQ = 1900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
48
f = 2140 MHz
47
32 33 34 35 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
30
VDD = 28 Vdc, IDQ = 1900 mA
25
f1 = 2135 MHz, f2 = 2145 MHz
2âCarrier WâCDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
20 PAR = 8.5 dB @ 0.01% Probability (CCDF)
15
â30
ηD
IM3
â35
ACPR
â40
Gps â45
10
â50
5
â55
0
1
â60
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
18
60
Gps
15
50
12
40
9
30
6
20
3 ηD
0
3
10
VDD = 28 Vdc
IDQ = 1900 mA
f = 2140 MHz
100
10
0
300
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
18
16
VDD = 28 V
14
12
24 V
10
20 V
8 IDQ = 1900 mA
f = 2140 MHz
6
3
10
16 V
12 V
100
500
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6P21190HR6
6
RF Device Data
Freescale Semiconductor
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