MRF6P21190HR6_06 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
20
40
18 ^ηD
30
16
20
14 ^{Gps V}DD ^{= 28 Vdc, P}out ^{= 44 W (Avg.), I}DQ ^{= 1900 mA}
10
2−Carrier W−CDMA, 10 MHz Carrier Spacing
12
−10
−10
IRL
10
−20
−15
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
8 _{IM3 @ 0.01% Probability (CCDF)}
−30
−20
6
ACPR
4
−40
−25
−50
−30
2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 44 Watts Avg.
20
50
18 ^ηD
40
16 _Gps
30
14
12
IRL
10
8
IM3
V_DD = 28 Vdc, P_out = 87 W (Avg.), I_DQ = 1900 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
20
0
−10
−10
−15
−20
−20
6
ACPR
4
−30
−25
−40
−30
2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 87 Watts Avg.
17
I_DQ = 2500 mA
16.5
2200 mA
16
1900 mA
15.5
1600 mA
15
14.5 ^{1300 mA}
14
1
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−30
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−35
I_DQ = 2500 mA
2200 mA
−40
1900 mA
1600 mA
−45
−50
−55
1
1300 mA
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
5