MRF5S9100NR1 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
0
− 10
− 20
3rd Order
− 30
5th Order
− 40
7th Order
− 50
− 60
− 70
0.1
V_DD = 26 Vdc, P_out = 96 W (PEP), I_DQ = 950 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
1
10
100
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
Ideal
57
P3dB = 51.58 dBm (143 W)
56
55
54
P1dB = 50.71 dBm (117 W)
53
52
Actual
51
50
V_DD = 26 Vdc, I_DQ = 950 mA
49
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
48
28 29 30 31 32 33 34 35 36 37 38
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
50
− 30
45 ^{VDD = 26 Vdc, IDQ = 950 mA, f = 880 MHz}
− 35
N−CDMA IS−95 (Pilot, Sync, Paging,
40 _{Traffic Codes 8 through 13)}
− 40
35
− 45
30 _ACPR
− 50
25
− 55
20 ^Gps
− 60
15
− 65
10
5 ^ηD
0
ALT1
1
10
− 70
− 75
− 80
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. Single - Carrier N - CDMA ACPR, Power
Gain, Efficiency and ALT1 versus Output Power
20
10¹⁰
I_DQ = 950 mA
f = 880 MHz
19.5
19
10⁹
18.5
24 V
20 V
18
16 V
32 V
17.5
V_DD = 12 V
17
0
30
60
90
120
150
180
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
MRF5S9100NR1 MRF5S9100NBR1
6
10⁸
10⁷
80
100 120 140 160 180 200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor