MRF5S9100NR1 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
22
50
20
G_ps
40
18
η_D
30
16
V_DD = 26 Vdc, P_out = 20 W (Avg.), I_DQ = 950 mA 20
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
14
IRL _{Codes 8 through 13)}
− 30
− 10
12
ACPR
10
ALT
8
− 40
− 15
− 50
− 20
− 60
− 25
6
− 70
− 30
830 840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 3. IS - 95 Broadband Performance @ P_out = 20 Watts Avg.
22
10
20
G_ps
8
18
6
16
η_D
V_DD = 26 Vdc, P_out = 2 W (Avg.), I_DQ = 950 mA 4
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
14
Codes 8 through 13)
IRL
− 40
− 10
12
− 50
− 15
10
ACPR
− 60
− 20
8
− 70
− 25
6
ALT
− 80
− 30
830 840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 4. IS - 95 Broadband Performance @ P_out = 2 Watts Avg.
21
I_DQ = 1425 mA
1150 mA
20
950 mA
19
700 mA
18
475 mA
17
V_DD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
16
0.1
1
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 20
− 25
− 30
− 35
− 40
I_DQ = 475 mA
1425 mA
− 45
− 50
− 55
− 60
− 65
− 70
0.1
950 mA
700 mA
1150 mA
V_DD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
1
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S9100NR1 MRF5S9100NBR1
5