MRF5S21090HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

TYPICAL CHARACTERISTICS
40
−15
V_DD = 28 Vdc, I_DQ = 850 mA, f1 = 2135 MHz,
35 f2 = 2145 MHz, 2 x W−CDMA, 10 MHz
−20
@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
30 _{@ 0.01% Probability (CCDF)}
−25
25
η_D
−30
20
G_ps
15
10
IM3
−35
−40
ACPR −45
5
−50
0
1
−55
10
P_out, POWER (WATTS) W−CDMA
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
10⁹
10⁸
10⁷
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
−20
3.84 MHz
−30
Channel BW
−40
−50
−60
−70
−80
−90
−100 _{−IM3 @}
−ACPR @ +ACPR @
3.84 MHz BW 3.84 MHz BW
−110 ^{3.84 MHz BW}
−120
−25 −20 −15 −10 −5 0 5 10
+IM3 @
3.84 MHz BW
15 20 25
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21090HR3 MRF5S21090HSR3
6
RF Device Data
Freescale Semiconductor