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MRF5S21090HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – To be Used in class AB for PCN-PCS/cellularradio and WLL applications. | |||
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TYPICAL CHARACTERISTICS
15
40
14 Gps
VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA
35
13 ηD
2âCarrier WâCDMA, 10 MHz Carrier Spacing
30
12
25
11 IRL
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
20
10
â20
â10
9
â25
â15
8
7 IM3
â30
â20
â35
â25
6
â40
â30
ACPR
5
â45
â35
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
17
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
TwoâTone Measurement, 10 MHz Tone Spacing
16 IDQ = 1200 mA
1000 mA
15 850 mA
14 650 mA
13 450 mA
12
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
â20
â25
3rd Order
â30
â35
5th Order
â40
â45
7th Order
â50
â55
â60
0.1
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
TwoâTone Measurements, Center Frequency = 2140 MHz
1
10
TWOâTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
â15
VDD = 28 Vdc
â20 f1 = 2135 MHz, f2 = 2145 MHz
TwoâTone Measurement, 10 MHz Tone Spacing
â25
â30
IDQ = 450 mA
â35
1200 mA
â40
â45
650 mA
â50
1
10
1000 mA
850 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
57
55
Ideal
P3dB = 51.17 dBm (130.9 W)
53
51 P1dB = 50.47 dBm (111.4 W)
49
Actual
47
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
45
30
32
34
36
38
40
42
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
5
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