MRF5S21045NR1_09 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
-2 5
-3 0
3rd Order
-3 5
-4 0
-4 5 ^{5th Order}
7th Order
-5 0
V_DD = 28 Vdc, P_out = 45 W (PEP), I_DQ = 500 mA
-5 5 _{Two-Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2140 MHz
-60
0.1
1
10
100
TWO-T ONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
54
P3dB = 48.17 dBm (65.6 W) Ideal
52
50 _{P1dB = 47.60 dBm (57.5 W)}
48
Actual
46
V_DD = 28 Vdc, I_DQ = 500 mA
44
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
42
28
30
32
34
36
38
40
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
V_DD = 28 Vdc, I_DQ = 500 mA
40 _{f1 = 2135 MHz, f2 = 2145 MHz}
2 x W-CDMA, 10 MHz
@ 3.84 MHz Bandwidth
30 ^{PAR = 8.5 dB @ 0.01%}
Probability (CCDF)
20
T_C = -30_C
G_ps
10 ^85_C
-10
-30 _C ^25_C
85_C
η_D
85_C
25_C
IM3
-20
-30 _C
85_C
-30
25_C ACPR
-30 _C
-40
25_C
0
1
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
-50
100
16
17
16 _{TC = -30_C}
15
25_C
14
85_C
13 ^{VDD = 28 Vdc}
I_DQ = 500 mA
f = 2140 MHz
12
60
-30 _C
25_C
50
85_C
40
30
20
10
11
0
0.1
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
14
32 V
12
28 V
24 V
10
20 V
8
16 V
I_DQ = 500 mA
6
V_DD = 12 V
f = 2140 MHz
0 10 20 30 40 50 60 70 80
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF5S21045NR1 MRF5S21045NBR1
6
RF Device Data
Freescale Semiconductor