MRF5S21045NR1_09 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15.2
32
15
η_D
28
14.8
24
14.6
V_DD = 28 Vdc, P_out = 10 W (Avg.), I_DQ = 500 mA 20
G_ps
2-Carrier W-CDMA, 10 MHz Carrier Spacing,
14.4
3.84 MHz Channel Bandwidth
16
14.2
PAR = 8.5 dB @ 0.01%
IRL
Probability (CCDF)
14
-28
-10
-32
-13
13.8
-36
-16
IM3
13.6
-40
-19
13.4 ^ACPR
-44
-22
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P_out = 10 Watts
14.8
46
14.6
42
14.4
η_D
38
14.2
34
G_ps
V_DD = 28 Vdc, P_out = 20 W (Avg.), I_DQ = 500 mA
14
2-Carrier W-CDMA, 10 MHz Carrier Spacing,
30
13.8
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
-18
-8
13.6
IRL
-22
-1 1
13.4
IM3
13.2
ACPR
13
-26
-14
-30
-17
-34
-20
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P_out = 20 Watts
17
I_DQ = 800 mA
16
650 mA
15
500 mA
14
350 mA
13
200 mA
12 ^{VDD = 28 Vdc}
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements
11
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
-1 0
-2 0
I_DQ = 200 mA
-3 0
800 mA
-40
650 mA
-5 0
350 mA
V_DD = 28 Vdc
-60 ^{f1 = 2135 MHz, f2 = 2145 MHz}
Two-Tone Measurements
500 mA
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
5