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MRF5S19060MR1 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS
14.8
24
14.6
ηD 23
14.4
VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA
2âCarrier NâCDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
22
Gps
14.2 @ 0.01% Probability (CCDF)
IM3 â35
â5
14
IRL
â 41
â 10
13.8
â 47
â 15
ACPR
13.6
â 53
â 20
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg.
14.2
39
14
37
ηD
13.8 VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA
Gps
35
2âCarrier NâCDMA, 2.5 MHz Carrier Spacing,
13.6
IM3 â25
â5
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
13.4 @ 0.01% Probability (CCDF)
IRL
â 31
â 10
13.2
ACPR â37
â 15
13
â 43
â 20
1900
1920 1940
1960 1980
2000 2020
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 30 Watts Avg.
17
16 IDQ = 1150 mA
950 mA
15
750 mA
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two âTone Measurements, 2.5 MHz Tone Spacing
14
550 mA
13
350 mA
12
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â 15
VDD = 28 Vdc
â 20
f1 = 1960 MHz, f2 = 1962.5 MHz
Two âTone Measurements,
â 25
2.5 MHz Tone Spacing
â30 IDQ = 350 mA
â 35
1150 mA
â 40
â 45
â 50
550 mA
â 55
950 mA
750 mA
â 60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S19060MR1 MRF5S19060MBR1
6
RF Device Data
Freescale Semiconductor
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