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MRF5S19060MR1 Datasheet, PDF (3/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical RF Performance (50 ohm system)
Pulse Peak Power
(VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 μs,
1% Duty Cycle)
Psat
â
110
â
W
Video Bandwidth
VBW
â
35
â
MHz
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing =
1 MHz to VBW, Î IM3<2dB)
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
3
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