MRF372R3 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor

TYPICAL TWO - TONE NARROWBAND CHARACTERISTICS
35
V_DD = 32 Vdc
30 I_DQ = 1600 mA
2 K Mode 64 QAM
25 ^{10 dB Peak/Avg. Ratio}
20
G_ps
−15
−20
h
−25
−30
15
−35
10
−40
IMR
5
−45
0
10
−50
100
P_out, OUTPUT POWER (WATTS) AVG.
Note: IMR measured using Delta Marker Method.
Figure 4. COFDM Performance (860 MHz)
40
−15
V_DD = 32 Vdc
35
I_DQ = 1600 mA
−20
6 dB Peak/Avg. Ratio
30
−25
25
h
−30
20
G_ps
−35
15
−40
IMR
10
−45
5
10
−50
100
P_out, OUTPUT POWER (WATTS) AVG.
Note: IMR measured using Delta Marker Method.
Figure 5. 8 - VSB Performance (860 MHz)
20
18 _{IDQ = 1600 mA}
1.2 A
16 _{800 mA}
400 mA
14
12
10
10
V_DD = 32 Vdc
f1 = 857 MHz
f2 = 863 MHz
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
−10
V_DD = 32 Vdc
−15 _{f1 = 857 MHz}
f2 = 863 MHz
−20
−25
I_DQ = 400 mA
−30
800 mA
−35
−40
1.2 A
−45
−50
10
1.6 A
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
MRF372R3 MRF372R5
6
45
V_DD = 32 Vdc
40 _{IDQ = 800 mA}
f1 = 857 MHz
35 _{f2 = 863 MHz}
30
25
20
15
10
5
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor