MRF372R3 Datasheet, PDF (10/16 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor

TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
20
V_DD = 32 Vdc
I_DQ = 1000 mA
18 _{f1 − f2 = 6 MHz}
16
G_ps = 660 MHz
14
470 MHz
860 MHz
12
10
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 12. Power Gain versus Output Power
−10
−15
V_DD = 32 Vdc
I_DQ = 1000 mA
−20 ^{f1 − f2 = 6 MHz}
−25
−30
IMD = 470 MHz
−35
860 MHz
−40
660 MHz
−45
−50
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion versus
Output Power
45
40
V_DD = 32 Vdc
I_DQ = 1000 mA
35 ^{f1 − f2 = 6 MHz}
30
h_D = 860 MHz
660 MHz
25
470 MHz
20
15
10
5
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 14. Drain Efficiency versus Output Power
MRF372R3 MRF372R5
10
RF Device Data
Freescale Semiconductor