MRF18085BLR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
(Performed on a GSM EDGE Optimized Demo Board)
14
I_DQ = 1000 mA
800 mA
13
600 mA
12
400 mA
11
V_DD = 26 Vdc
f = 1960 MHz
10
1
10
100
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
5
4.5
V_DD = 26 Vdc
I_DQ = 800 mA
4
3.5
P_out = 38 W Avg.
3
2.5
28 W Avg.
2
1.5
19 W Avg.
1
0.5
0
1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.0
f, FREQUENCY (GHz)
Figure 6. Error Vector Magnitude versus
Frequency
14
13.5
13
12.5
12
32 V
11.5
28 V
11
10.5
24 V
10
V_DD = 20 V
9.5
9
0
20
40
60
80
100
P_out, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
6
14
5
G_ps
13
4
12
3
11
2
10
1
EVM
9
0
8
34 36 38 40 42 44 46 48 50
P_out, OUTPUT POWER (dBm) AVG.
Figure 8. EVM and Gain versus Output Power
14
13.5
13
12.5
12
11.5
11
1.85
−5 16
60
30 W
−10
−15
−20
80 W
30 W
−25
80 W
1.90
1.95
f, FREQUENCY (GHz)
V_DD = 26 Vdc
I_DQ = 800 mA
−30
−35
2.00
2.05
Figure 9. Power Gain and IRL
versus Frequency
15
50
14
40
G_ps
13
30
12
20
h
11
10
1
V_DD = 26 Vdc
I_DQ = 800 mA
10
f = 1960 MHz
0
10
100
P_out, OUTPUT POWER (WATTS)
Figure 10. Power Gain and Efficiency
versus Output Power
MRF18085BLR3 MRF18085BLSR3
6
RF Device Data
Freescale Semiconductor