MRF18085BLR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 600 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common- Source Amplifier Power Gain @ 85 W
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 85 W
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1930 - 1990 MHz)
Input Return Loss @ 85 W
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1930 - 1990 MHz)
P1 dB Output Power
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1930 - 1990 MHz)
1. Part is internally matched both on input and output.
V_(BR)DSS
65
I_DSS
—
I_GSS
—
V_GS(th)
2
V_GS(Q)
2.5
V_DS(on)
—
C_rss
—
G_ps
11.5
η
46
IRL
—
P1dB
80
Class
1 (Minimum)
M3 (Minimum)
Typ
Max
—
—
—
10
—
1
Unit
Vdc
μAdc
μAdc
—
4
Vdc
3.9
4.5
Vdc
0.18
0.21
Vdc
3.6
—
pF
12.5
—
dB
50
—
%
- 12
-9
dB
90
—
W
MRF18085BLR3 MRF18085BLSR3
2
RF Device Data
Freescale Semiconductor