MRF1518T1 Datasheet, PDF (6/20 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR

TYPICAL CHARACTERISTICS, 820 - 850 MHz
17
850 MHz
15
840 MHz
13
830 MHz
820 MHz
11
9
7
V_DD = 12.5 Vdc
5
1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS)
Figure 13. Gain versus Output Power
80
70
850 MHz
840 MHz
60
50
820 MHz
40
830 MHz
30
20
10
V_DD = 12.5 Vdc
0
1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS)
Figure 14. Drain Efficiency versus Output
Power
12
840 MHz ^{830 MHz}
10
8
820 MHz
6
850 MHz
4
2
V_DD = 12.5 Vdc
0
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 15. Output Power versus
Biasing Current
12
11
840 MHz
10
9
830 MHz
8
820 MHz
7
6
850 MHz
5
4
3
V_DD = 12.5 Vdc
2
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus
Supply Voltage
70
850 MHz
60
50
820 MHz
840 MHz ^{830 MHz}
40
30
20
10
V_DD = 12.5 Vdc
0
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 16. Drain Efficiency versus
Biasing Current
80
75
840 MHz
70
65
850 MHz
60
55
830 MHz
50
45
820 MHz
40
35
V_DD = 12.5 Vdc
30
8 9 10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus
Supply Voltage
MRF1518T1
6
RF Device Data
Freescale Semiconductor