MRF1518T1 Datasheet, PDF (11/20 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR

Z_o = 10 Ω
520 ^Zin
520
f = 450 MHz
f = 450 MHz _ZOL*
Z_o = 10 Ω
f = 850 MHz
f = 850 MHz
Z_OL*
f = 820 MHz
Z_{in f = 820 MHz}
V_DD = 12.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
450
4.9 +j2.85 6.42 +j3.23
470 4.85 +j3.71 4.59 +j3.61
500 4.63 +j3.84 4.72 +j3.12
520 3.52 +j3.92 3.81 +j3.27
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 82 pF capacitor in
series with gate. (See Figure 1).
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
V_DD = 12.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
820 1.42 - j0.32 2.34 +j0.23
830 1.39 - j0.21 2.36 +j0.47
840 1.32 - j0.16 2.40 +j0.69
850 1.23 - j0.13 2.37 +j0.79
Z_in = Complex conjugate of source
impedance.
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Note: Z_OL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 37. Series Equivalent Input and Output Impedance
RF Device Data
Freescale Semiconductor
MRF1518T1
11