MMG2401NR2 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – Indium Gallium Phosphorus HBT - WLAN Power Amplifier

TYPICAL CHARACTERISTICS
29
28
T_C = 25_C
27
−40_C
85_C
26
25
V_CC = 3.3 Vdc
V_B1 = 2.9 Vdc
24
f = 2450 MHz
0
5
10
15
20
25
P_out, OUTPUT POWER (dBm)
Figure 4. Power Gain versus Output Power
7
V_CC = 3.3 Vdc
6
V_B1 = 2.9 Vdc
f = 2450 MHz
5
4
3
2
85_C
1
−40_C
T_C = 25_C
0
0
5
10
15
20
25
P_out, OUTPUT POWER (dBm)
Figure 5. Error Vector Magnitude versus
Output Power
25
T_C = −40_C
20
25_C
15
85_C
10
5
V_CC = 3.3 Vdc
V_B1 = 2.9 Vdc
f = 2450 MHz
0
0
5
10
15
20
25
P_out, OUTPUT POWER (dBm)
Figure 6. Efficiency versus Output Power
10
1
T_C = 85_C
0.1
25_C
−40_C
0.01
0
5
10
V_CC = 3.3 Vdc
V_B1 = 2.9 Vdc
f = 2450 MHz
15
20
25
P_out, OUTPUT POWER (dBm)
Figure 7. Detector Output Voltage versus
Output Power
4
V_CC = 3.3 Vdc
3 _{VB1 = 2.9 Vdc}
f = 2450 MHz
2
1
0
−1
−2
−3
−4
0
5
10
15
20
25
30
P_out, OUTPUT POWER (dBm)
Figure 8. AM to PM versus Output Power
250
200
T_C = 85_C
150
25_C
100
−40_C
50
V_CC = 3.3 Vdc
V_B1 = 2.9 Vdc
f = 2450 MHz
0
0
5
10
15
20
25
P_out, OUTPUT POWER (dBm)
Figure 9. Total Current versus Output Power
MMG2401NR2
6
RF Device Data
Freescale Semiconductor