MMG2401NR2 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Indium Gallium Phosphorus HBT - WLAN Power Amplifier

Freescale Semiconductor
Technical Data
Indium Gallium Phosphorus HBT
WLAN Power Amplifier
Designed for 802.11g and dual mode applications with frequencies from
2400 to 2500 MHz.
• 26.5 dBm P1dB @ 2450 MHz
• Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)
• High Gain, High Efficiency and High Linearity
• EVM = 3% Typ @ P_out = +19 dBM, 14% PAE
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.
Document Number: MMG2401
Rev. 3, 5/2006
MMG2401NR2
2400- 2500 MHz, 27.5 dB, 26.5 dBm
802.11g WLAN POWER AMPLIFIER
InGaP HBT
Table 1. Maximum Ratings
Rating
Collector Supply
Base Supply First Stage
Base Supply Second Stage
Detector Bias Supply
DC Current
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Operating Temperature Range
Storage Temperature Range
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Simulated.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
CASE 1483 - 01
QFN 3x3
Symbol
V_CC
V_B1
V_B2
V_BIAS
I_DC
Symbol
R_θJC
T_C
T_stg
Value
5
5
5
5
171
Value
185 ⁽¹⁾
- 40 to +85
- 55 to +150
Class
2 (Minimum)
A (Minimum)
II (Minimum)
Rating
1
Package Peak Temperature
260
Unit
V
V
V
V
mA
Unit
°C/W
°C
°C
Unit
°C
MMG2401NR2
1