33932 Datasheet, PDF (6/21 Pages) Freescale Semiconductor, Inc – 5.0 A Throttle Control H-Bridge

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 8.0 V ≤ V_PWR ≤ 28 V, -40°C ≤ T_A ≤ 125°C, GND = 0 V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Specifications given for H-Bridge A apply symmetrically to H-Bridge B.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUTS (VPWR)
Operating Voltage Range⁽¹⁰⁾
Steady-state
Transient (t < 500 ms)⁽¹¹⁾
Quasi-Functional (R_DS(ON) May Increase by 50%)
Sleep State Supply Current⁽¹²⁾
EN/D2 = Logic [0], IN1, IN2, D1 = Logic [1], and I_OUT = 0 A
Standby Supply Current (Part Enabled)
I_OUT = 0 A, V_EN = 5.0 V
Under-voltage Lockout Thresholds
V_PWR(falling)
V_PWR(rising)
Hysteresis
CHARGE PUMP
V
V_PWR(SS)
8.0
–
28
V_PWR(t)
–
–
40
V_PWR(QF)
5.0
–
8.0
I_PWR(SLEEP)
–
μA
–
50
I_PWR(STANDBY)
–
mA
–
20
V_UVLO(ACTIVE)
4.15
–
–
V
V_{UVLO(INACTIVE)}
–
–
5.0
V
V_UVLO(HYS)
150
200
350
mV
Charge Pump Voltage (CP Capacitor = 33 nF), No PWM
V_PWR = 5.0 V
V_PWR = 28 V
Charge Pump Voltage (CP Capacitor = 33 nF), PWM = 11 kHz
V_PWR = 5.0 V
V_PWR = 28 V
CONTROL INPUTS
V_CP - V_PWR
3.5
–
V
–
–
–
12
V_CP - V_PWR
3.5
–
V
–
–
–
12
Operating Input Voltage (IN1, IN2, D1, EN/D2, IN3, IN4, D3, EN/D4)
Input Voltage (IN1, IN2, D1, EN/D2, IN3, IN4, D3, EN/D4)
Logic Threshold HIGH
Logic Threshold LOW
Hysteresis
Logic Input Currents, VPWR = 8.0 V
Input EN/D2, EN/D4 (internal pull-downs), V_IH = 5.0 V
Inputs IN1, IN2, D1, IN3, IN4, D3 (internal pull-ups), VIL = 0 V
V_I
V_IH
V_IL
V_HYS
I_IN
–
–
5.5
V
2.0
–
–
V
–
–
1.0
V
250
400
–
mV
μA
20
80
200
-200
-80
-20
Notes
10. Device specifications are characterized over the range of 8.0 V ≤ V_PWR ≤ 28 V. Continuous operation above 28 V may degrade device
reliability. Device is operational down to 5.0V, but below 8.0 V the output resistance may increase by 50 percent.
11. Device will survive the transient over-voltage indicated for a maximum duration of 500 ms. Transient not to be repeated more than once
every 10 seconds.
12. I_PWR(SLEEP) is with Sleep Mode activated and EN/ D2, = logic [0], and IN1, IN2, D1 = logic [1] or with these inputs left floating.
33932
6
Analog Integrated Circuit Device Data
Freescale Semiconductor